Micron-Diameter High-Aspect-Ratio Through-Silicon Via (MH-TSV) Filling For 3D-Interconnect (ART/393CP) | ASTRI - Hong Kong Applied Science And Technology Research Institute Company Limited

Project Title:

Micron-Diameter High-Aspect-Ratio Through-Silicon Via (MH-TSV) Filling for 3D-Interconnect (ART/393CP)

Project Reference:

ART/393CP

Project Type:

Platform

Project Period:

01 / 01 / 2025 - 30 / 06 / 2026

Funds Approved (HK$’000):

10,994.000

Project Coordinator:

Dr Wanzhen HE

Deputy Project Coordinator:

Deliverable:

Research Group:

Sponsor:

Huawei Tech. Investment Co., Limited
Fly Dragon Industry (Hong Kong) Co., Limited

Description:

Through-silicon via is pivotal in 3D IC and advanced packaging technologies, anticipated to command a global market value of US$22 billion by 2030. TSV enables shorter signal paths and enhances IC performance, hence, the quality of TSV filling is crucial for reliable 3D-interconnects. This project would establish the platform for TSV electroplating, develop methodologies and process recipes for 3-micron-diameter 10-aspect-ratio TSV filling, and create a general EDA engine for TSV filling with a broad range of geometries. Our approaches include establishing the atomic layer deposition process for electroplating seed layer, a new electrochemical screening device, and comprehensive computational models. The expected outcomes include the refined process, additives' recipe, and an EDA engine for MH-TSV filling, alongside collaboration with university and industry. This advanced technology is expected to promote industrialization for 3D IC and chiplet applications.

Co-Applicant:

Keywords:

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