SOI device modelling

SOI device modelling

  • In this project, ICCAP of Agilent is used to extract DC and RF model for the devices fabricated in 0.13um SOI process. Both active devices including MOSFET, diode and bipolar, and passive devices such as resistor, capacitor and inductor models are extracted. As for MOSFET, floating body (FB) device, single body contact (T Type) and double body contact (H Type) device are covered in model extraction. Model lib includes temperature, noise and RF. Corner model is also included to include process variations. Automatic layout tools developed in this team is applied to generate nearly thousand device patterns. The models are qualified by commercially available QA tools (MQA).