3D High Power Electronics Modules

3D High Power Electronics Modules

  • 3D High Power Electronics Modules
    ART/171CP
    20140317 - 20150916
    12305

    Dr Xunqing Daniel Shi
    1. Report on fully molded module design. (Target completion date: 6th month from commencement) As compared to conventional aluminum wirebond based power module, this module is capable of supporting 3 times service life, as well as providing 77% and 65% better electrical and thermal performances, respectively. Such performance improvements are achieved by: (i) Better mechanical and electrical structure designs (ii) Optimized heat-sink and water cooling structures (iii) Enhanced die attach materials 2. Design of a wire-bond based module for benchmark purpose. (Target completion date: 6th month from commencement) 3. Wafer-level packaging and assembly process recipes for the fully molded module. (Target completion date: 12th month from commencement) 4. 15 fully molded module prototypes (Target completion date: 12th month from commencement) 5. Wire-bond module prototypes for benchmark purpose. (Target completion date: 12th month from commencement) 6. A 3D integration pilot line with a full set of process recipes including die bond, SMT pick and place and vacuum reflow for small volume module production (Target completion date: 12th month from commencement) 7. Report on following: (Target completion date: 18th month from commencement) (i) Long-term interconnect reliability (e.g., MSL, thermal cycling, vibration, tooling/chamber development, etc.) (ii) Power module performance evaluation (e.g., thermal, electrical, measurement method, etc.) (iii) Methodologies and database (e.g., reliability, failure mode mechanism, etc.)
    Dr Daniel Xunqing SHI Dr Ziyang GAO Ms YH KWAN Mr Michael REN Dr Pearl YE Mr Carlos CHOW Mr Andy LEE Dr Yan LIU Mr Paul CHEUNG Mr WK LUK Mr Lourdito M. OLLERES Ms Fiona Y. WANG Ms Jianjing, Joyce WANG Ms Ya LV Mr Tak Ki Peter Wan Dr Xiangfeng Shao Mr Kwong Wa, Ken Yeung Mr Pei Chin Ryan Chung Ms Juanna YAO Dr Weiming FU Dr Bin XIE
    Fenghua Advanced Technology Co., Ltd. of Guangdong [Sponsor] Fenghua Advanced Technology Co., Ltd. of Guangdong (Technology Licencing) [Sponsor] Great Team Backend Foundry (Dongguan) Ltd. [Sponsor] L Lab Corporation (Hong Kong) Limited [Sponsor] L Lab Corporation (Hong Kong) Limited (Technology Licencing) [Sponsor] Mainstone International Limited Mainstone International Limited (Technology Licencing) TriQuint Semiconductor, Inc.

    Power semiconductors are primarily used as high switching speed and long lifetime commutation switches inside inverters and converters, which are widely utilized in home appliances, electric vehicles, wind power generators, solar power generators, etc. Fueled by the increasing demands on renewable energy and energy conservation, the power semiconductor markets are expected to grow dramatically from US$16 billion in 2011 to US$ 20 billion in 2015. More specifically, the IGBT (Insulated Gate Bipolar Transistor) market in China is expected to reach RMB 7.5 billion, representing approximately 25% of the global market. Apart from device design, electronics packaging plays a crucial role in determining the electrical, thermal and reliability performance of the final products. This project plans to develop a high power (0.5~2MW) IGBT module package technology based on ASTRI’s 3D power electronics module structure. Compared to conventional wirebond-based module packaging, ASTRI's solution can achieve 80% thickness reduction and 70% weight reduction. ASTRI’s technology can further reduce approximately 77% voltage overshoot and 34% current density inside the interconnects, as well as enhancing the overall thermal dissipation performance by approximately 70%. This project introduces a new fully molded IGBT module packaging approach in which both sides of the ceramic substrates are exposed for direct contact with the coolant. Special internal water channel design and micro-pillars on the exposed substrates can promote heat dissipating efficiency 37% better than the most advanced solution available in the market. This project will also establish a pilot power semiconductor packaging assembly line (i) to support the process development of this project, (ii) to help commercialize the developed process recipes to our customers, and (iii) produce a small amount of production IGBT modules to the industry. It is our target to provide not only a technology platform but also a tangible solution beneficial to industry players in the Greater China region to meet the huge domestic demands.