叁维大功率电力电子模块

叁维大功率电力电子模块

  • 叁维大功率电力电子模块
    ART/171CP
    20140317 - 20150916
    12305

    史训清博士
    1. Report on fully molded module design. (Target completion date: 6th month from commencement) As compared to conventional aluminum wirebond based power module, this module is capable of supporting 3 times service life, as well as providing 77% and 65% better electrical and thermal performances, respectively. Such performance improvements are achieved by: (i) Better mechanical and electrical structure designs (ii) Optimized heat-sink and water cooling structures (iii) Enhanced die attach materials 2. Design of a wire-bond based module for benchmark purpose. (Target completion date: 6th month from commencement) 3. Wafer-level packaging and assembly process recipes for the fully molded module. (Target completion date: 12th month from commencement) 4. 15 fully molded module prototypes (Target completion date: 12th month from commencement) 5. Wire-bond module prototypes for benchmark purpose. (Target completion date: 12th month from commencement) 6. A 3D integration pilot line with a full set of process recipes including die bond, SMT pick and place and vacuum reflow for small volume module production (Target completion date: 12th month from commencement) 7. Report on following: (Target completion date: 18th month from commencement) (i) Long-term interconnect reliability (e.g., MSL, thermal cycling, vibration, tooling/chamber development, etc.) (ii) Power module performance evaluation (e.g., thermal, electrical, measurement method, etc.) (iii) Methodologies and database (e.g., reliability, failure mode mechanism, etc.)
    Dr Daniel Xunqing SHI Dr Ziyang GAO Ms YH KWAN Dr Pearl YE Mr Carlos CHOW Mr Andy LEE Dr Yan LIU Mr Paul CHEUNG Mr WK LUK Mr Lourdito M. OLLERES Ms Ya LV Mr Kwong Wa, Ken Yeung Dr Weiming FU Dr Bin XIE Mr Simon WONG Mr Jun CHEN
    广东风华高新科技股份有限公司 [赞助机构] Fenghua Advanced Technology Co., Ltd. of Guangdong (Technology Licencing) [赞助机构] Great Team Backend Foundry (Dongguan) Ltd. [赞助机构] L Lab Corporation (Hong Kong) Limited [赞助机构] L Lab Corporation (Hong Kong) Limited (Technology Licencing) [赞助机构] 万讯国际有限公司 Mainstone International Limited (Technology Licencing) TriQuint Semiconductor, Inc.

    功率半导体主要於逆变器和转换器电路中作为高速和长寿命的换向开关,并已广泛应用於家电、电动汽车、风力发电、太阳能发电等。由於再生能源和节约能源的需求日益增加,因此预料功率半导体市场会大幅增长,由2011年的160亿美元市场增长至2015年的200亿美元市场,估计2012年中国的IGBT(绝缘栅双极电晶体)可达75亿元人民币,占全球IGBT市场约25%。 除晶片本身的设计外,电子封装於最终产品的电性能、热性能及可靠性等方面都扮演决定性的角色。本项目我们将基於一种应科院自主开发之叁维电力电子模组结构,进行大功率(0.5~2.0MW) IGBT模组封装。跟传统线焊(wirebond)方法比较,应科院方案之厚度和重量分别可减少达80%和70%。应科院技术更可减低约77%过冲电压 (overshoot voltage)、减低於互连中约34%电流密度 (Current Density)、及提高约70%整体散热效能。此外,本项目引入一个崭新的IGBT模块全封成型之封装方法,使陶瓷基板背面得与冷却剂直接接触。透过水通道之特殊内部结构设计和陶瓷基板上之微柱结构,促进更好的散热效率,比市面上最先进的解决方案相比更达37%之散热提升。同时,本项目亦将开展一条功率半导体封装试产线,一方面支援有关本项目的工艺开发,同时亦可将有关工艺参数授权予工业界,并提供小批量IGBT模组生产支援。 我们目标不仅是提供一个技术平臺,更重要是提出一个实质的解决方案,有利於在大中华地区的企业,以满足国内的庞大需求。