三維大功率電力電子模塊

三維大功率電力電子模塊

  • 三維大功率電力電子模塊
    ART/171CP
    20140317 - 20150916
    12305

    史訓清博士
    1. Report on fully molded module design. (Target completion date: 6th month from commencement) As compared to conventional aluminum wirebond based power module, this module is capable of supporting 3 times service life, as well as providing 77% and 65% better electrical and thermal performances, respectively. Such performance improvements are achieved by: (i) Better mechanical and electrical structure designs (ii) Optimized heat-sink and water cooling structures (iii) Enhanced die attach materials 2. Design of a wire-bond based module for benchmark purpose. (Target completion date: 6th month from commencement) 3. Wafer-level packaging and assembly process recipes for the fully molded module. (Target completion date: 12th month from commencement) 4. 15 fully molded module prototypes (Target completion date: 12th month from commencement) 5. Wire-bond module prototypes for benchmark purpose. (Target completion date: 12th month from commencement) 6. A 3D integration pilot line with a full set of process recipes including die bond, SMT pick and place and vacuum reflow for small volume module production (Target completion date: 12th month from commencement) 7. Report on following: (Target completion date: 18th month from commencement) (i) Long-term interconnect reliability (e.g., MSL, thermal cycling, vibration, tooling/chamber development, etc.) (ii) Power module performance evaluation (e.g., thermal, electrical, measurement method, etc.) (iii) Methodologies and database (e.g., reliability, failure mode mechanism, etc.)
    Dr Daniel Xunqing SHI Dr Ziyang GAO Ms YH KWAN Dr Pearl YE Mr Carlos CHOW Mr Andy LEE Dr Yan LIU Mr Paul CHEUNG Mr WK LUK Mr Lourdito M. OLLERES Ms Ya LV Mr Kwong Wa, Ken Yeung Dr Weiming FU Dr Bin XIE Mr Simon WONG Mr Jun CHEN
    廣東風華高新科技股份有限公司 [贊助機構] Fenghua Advanced Technology Co., Ltd. of Guangdong (Technology Licencing) [贊助機構] Great Team Backend Foundry (Dongguan) Ltd. [贊助機構] L Lab Corporation (Hong Kong) Limited [贊助機構] L Lab Corporation (Hong Kong) Limited (Technology Licencing) [贊助機構] 萬訊國際有限公司 Mainstone International Limited (Technology Licencing) TriQuint Semiconductor, Inc.

    功率半導體主要於逆變器和轉換器電路中作為高速和長壽命的換向開關,並已廣泛應用於家電、電動汽車、風力發電、太陽能發電等。由於再生能源和節約能源的需求日益增加,因此預料功率半導體市場會大幅增長,由2011年的160億美元市場增長至2015年的200億美元市場,估計2012年中國的IGBT(絕緣柵雙極電晶體)可達75億元人民幣,占全球IGBT市場約25%。 除晶片本身的設計外,電子封裝於最終產品的電性能、熱性能及可靠性等方面都扮演決定性的角色。本項目我們將基於一種應科院自主開發之三維電力電子模組結構,進行大功率(0.5~2.0MW) IGBT模組封裝。跟傳統線焊(wirebond)方法比較,應科院方案之厚度和重量分別可減少達80%和70%。應科院技術更可減低約77%過沖電壓 (overshoot voltage)、減低於互連中約34%電流密度 (Current Density)、及提高約70%整體散熱效能。此外,本項目引入一個嶄新的IGBT模塊全封成型之封裝方法,使陶瓷基板背面得與冷卻劑直接接觸。透過水通道之特殊內部結構設計和陶瓷基板上之微柱結構,促進更好的散熱效率,比市面上最先進的解決方案相比更達37%之散熱提升。同時,本項目亦將開展一條功率半導體封裝試產線,一方面支援有關本項目的工藝開發,同時亦可將有關工藝參數授權予工業界,並提供小批量IGBT模組生產支援。 我們目標不僅是提供一個技術平臺,更重要是提出一個實質的解決方案,有利於在大中華地區的企業,以滿足國內的龐大需求。