GaN-based High-density Power Module for Next Generation Power Conversions (Full) (ART/265CP)

GaN-based High-density Power Module for Next Generation Power Conversions (Full) (ART/265CP)

  • GaN-based High-density Power Module for Next Generation Power Conversions (Full) (ART/265CP)
    ART/265CP
    Collaborative
    10 / 09 / 2018 - 09 / 09 / 2020
    15,344

    Dr Ziyang GAO

    1. Platform establishment of GaN-based high density power module for next generation power conversions and the design report, including: a) Patent analysis on the power converting technologies adopting the wide-band-gap semiconductors and the report. b) Structure design of the “DSC-SiP” power converter, including modeling and simulation on stress, strain, creep, fatigue and vibration. c) Thermal design of the “DSC-SiP” power converter, including finite element & computational fluid dynamic modeling and simulation on static state & transient thermal performance. d) Electrical design of the “DSC-SiP” power converter, including high frequency resonant topology, driver-integrated solutions, etc. e) Firmware design of the “DSC-SiP” power converter, including hybrid control algorithm, adaptive SR driving and layout optimizations, etc. f) Magnetic design of the “DSC-SiP” power converter, including modeling and simulation on matrix transformer, etc. 2. Development of “All-GaN” power device for “DSC-SiP” power converter and the design report, including: a) IC design and simulation for on-chip over temperature protection (OTP) & over current protection (OCP) circuits. b) Package design of standing “All-GaN” package; c) Fabrication of on-chip integrated “All-GaN” device with OTP, OCP features and the evaluation prototype of standing “All-GaN” package; d) Preliminary performance evaluation of “All-GaN” device and the standing “All-GaN” package. 3. “DSC-SiP” power converter process design, optimization, sample build and the assembly report: a) Process design and optimization of packaging process flow & recipes for standing “All-GaN” package; b) Process design and optimization of packaging process flow & recipes for “DSC-SiP” power converter; c) Prototype sample build of “DSC-SiP” power converter. 4. Performance evaluation methodologies & testing results of the “DSC-SiP” power converter and the final report: a) Electrical evaluation methodology and testing results with maximum power conversion efficiency ≥97% & power level ≥ 1KW with a power density of 800W/in3; b) Thermal evaluation methodology and testing results with heat dissipation limit improved by 50%; c) Long-term reliability assessment methodology and the analysis report. 5. For contract service project with Fareast Huaqiang: a) A design report on high density power module and 400 pcs power module engineering samples. b) A performance evaluation report on high density power module and 1600 pcs power module engineering samples. 6. For contract service project with Jilin Sinomicroelectronics: a) A technical report on high heat dissipation, high power and high density power module. b) 68 pcs high heat dissipation, high power and high density power module engineering samples. c) A reliability testing and evaluation report on high heat dissipation, high power and high density power module. 7. For contract service project with Mainstone: a) A report on design of high density power module (1) & (2) and numerical simulations; A report on comparison between high density power module (1) and (2) based on thermal, electrical and mechanical simulations. b) 20 pcs of high density power module prototype samples; A testing and evaluation report; A technical transfer report on selected high density power module solution. 8. For contract service project with GBTech: a) A design report on AC/DC high density power module for consumer electronics applications; A design report on micro high density power module for telecommunication and data centre applications. b) 200 pcs of AC/DC high density power module prototype samples and a preliminary testing evaluation report; 500 pcs of micro high density power module prototype samples and a preliminary testing evaluation report. c) 1000 pcs of AC/DC high density power module prototype samples and a final testing evaluation report; 1500 pcs of micro high density power module prototype samples and a final testing evaluation report.

    Fareast Huaqiang Navigation & Position Co., Ltd
    Fareast Huaqiang Navigation & Position Co., Ltd (Contract service) [Sponsor]
    Guangdong GBTech Company Limited
    Guangdong GBTech Company Limited (Contract service) [Sponsor]
    Jilin Sino-Microelectronics Co., Ltd
    Jilin Sino-Microelectronics Co., Ltd (Contract service) [Sponsor]
    Mainstone International Limited
    Mainstone International Limited (Contract service) [Sponsor]


    Wide-bandgap semiconductor devices, or the 3rd generation semiconductor devices, are widely accepted as the next generation solution to penetrate the current power density limit of Si devices due to their wide-bandgap energy that enable them to operate at much higher voltage, frequency and temperature. Of all the potential solutions, SiC devices are mainly used in high voltage applications whereas GaN devices are adopted to boost up the operation frequency of the system so that the volume and weight of the passives, especially the large inductive components, can be tremendously reduced. According to the newly released data from the Transparency Market Research on Aug. 29, 2016, the GaN device market will rise at a compound annual growth rate (CAGR) of 17% over 2016-2024, increasing from $871 million in 2015 to $3,438 million in 2024.
    Apart from the device itself, it is NOT a simple replacement when implementing the GaN-devices in varies of applications. As the operation frequency increases, the parasitic effects will become much more challenging. New gate drivers, system topologies, control algorithms, magnetic components as well as new packaging structures should be developed accordingly to make full use of the advantages of GaN devices. By developing a series of generic platform technologies of the device, package and module levels, this project aims to deliver a novel ultra-high density and efficiency power converter by proposing the following key technologies to solve the electrical, thermal, mechanical and packaging challenges of GaN-based converters for the next generation power conversion: (1) 3D stacked “VDG” packaging solution + “All-GaN” device to achieve a reliable switching at much higher operation frequency; (2) Matrix Transformer + Resonant (MTR) topology to improve power density & conversion efficiency; (3) Hybrid Control + Adaptive (HCA) SR driving to enable an ultra-fast, accurate & high efficiency control; (4) Sandwiched SiP packaging structure + Dual-side-cooled (DSC-SiP) thermal interface to breakthrough the heat dissipation limit of conventional power converters.
    It is believed that the proposed technologies in this project are the key methods to solve the multi-disciplinary challenges of next generation GaN-based power converters. Together with the approaches already achieved in the seed project, our final target is to provide not only a technology platform but also a tangible high-density power conversion solution beneficial to the industry players in the Greater China region to meet the huge domestic demands in future.