Dual-mode RF Transceiver System and Architecture Design - System and architecture design - System level simulation - System and modules specification definition Dual-mode RF Transceiver Modules IP - Initial version of modules IP design in circuit schematic, netlist and simulation - Initial version of modules including RF transceiver core, on-chip high efficiency PA, embedded power management unit, on-chip RF switch, integrated DCXO and etc. - Refined version of modules IP design in circuit schematic, netlist and simulation - Refined version of modules including RF transceiver core, on-chip high efficiency PA, embedded power management unit, on-chip RF switch, integrated DCXO and etc. Dual-mode RF Transceiver - Initial version of dual-mode RF transceiver chips - Refined version of dual-mode RF transceiver chips Reference Design - Reference design for dual-mode RF transceiver Key parameters are listed below: - Supported Standard: eMTC and NB-IoT standards in 3GPP Release 14 - System bandwidth: 1.4MHz for eMTC and 200KHz for NB-IoT - Noise figure: 7dB - Receiver gain range: 115dB - Maximum transmit power: 20dBm - Transmitter Error Vector Magnitude (EVM): 8% - Receiver chain number: 1 - Transmitter chain number: 1 - Control interface: SPI - Temperature: -20 ~ +85 ºC
Over 530 million devices based on operator’s network will be shipped in 2022 with a compound annual growth rate (CAGR) of 22.7%, according to Berg Insight’s forecast in March 2017. Enhanced Machine Type Communication (eMTC) and Narrowband Internet of Things (NB-IoT) are two key technologies for cellular IoT connectivity, and their latest specifications are defined in 3GPP Release 14 published in June 2017.
In this full project, a dual-mode RF transceiver supports specifications defined in 3GPP Release 14 will be developed. We will propose novel architecture and design on-chip high power high efficiency power amplifier (PA) for low power and low cost dual-mode operation. The RF transceiver will support wide frequency band and various types of batteries. Several key technologies will be developed including low intermediate frequency (IF) receiver, polar transmitter, integrated CMOS PA, embedded power management unit, on-chip RF switch, integrated digitally controlled crystal oscillator (DCXO) and etc. The RF transceiver can be licensed to the industry to help our customers to capture huge IoT market in time.
This project will greatly help Hong Kong to set up a technology leading role in the field of IoT, and create a competitive edge for local IC design houses, IoT solution vendors, OEM and ODM manufacturers.