TD-LTE/TD-SCDMA 雙模射頻收發器芯片
ART/086CP
20100621 - 20121220
19836
張為民先生
Dual-mode Multi-band RFIC Transceiver Architecture and System Design
• Dual-mode multi-band reconfiguration design;
• MIMO design and implementation;
• Direct conversion architecture design;
• System and modules specifications definition;
• System interfaces.
Dual-mode Multi-band Transceiver Modules IP
• Modules IP design in terms of schematics, simulation and layout;
• Modules include RF front-end modules, frequency synthesizer modules, serial interface and miscellaneous modules;
• Modules IP evaluation results.
Dual-mode Transceiver RFIC chips capable of SISO, MISO and MIMO functions
• Functional RFIC engineering samples. A few silicon tapeouts are planned.
Single-mode TD-LTE Transceiver RFIC chip
• Single-mode TD-LTE RF transceiver test chip as early deliverable (13 months after project kickoff)
Demo Boards
• Demo boards for the RFIC chips to work or test in a platform.
Final Reports
• All documentations which are necessary to license our technology and IP to external partners, including design, interface and integration.
Patent Applications
• We plan to apply for one to two patents in the areas of direct conversion architecture, DC offset cancellation, MIMO, and modules design and implementation.
Industry Contribution and Sponsorship
• Guangzhou Runxin is very interested to collaborate with ASTRI, other potential customers include Nationz, Huawei, Hisilicon in Shenzhen, Rising in Guangzhou, Solomon Systech in Hong Kong, RDA in Shanghai and MTK in Taiwan, we will continue to engage with customers for IP licensing during project and after the end of project. We will review industry contribution and sponsorship status in the 9th month after project kickoff, and it is our responsibility to achieve at least 10% industry contribution within 15 months after project kickoff.
廣州潤芯信息技術有限公司
創毅微電子 (香港) 科技有限公司
香港中文大學
香港科技大學
LTE已被世界上大部分運營商選為它們下一步蜂窩網絡演進的方向。TD-LTE作為LTE兩個模式之一，不僅僅被世界上大部分運營商所選擇，同時也被認為是中國3G標準TD-SCDMA的演進方向。在這個項目中，我們會開發一個雙模式多頻帶TD-LTE/TD-SCDMA射頻收發器芯片來支持中國2300至2400兆赫，2010至2025兆赫和1880至1920兆赫的頻段。我們會開發有關TD-LTE/TD-SCDMA終端射頻收發器的關鍵技術，比如，MIMO（多輸入多輸出），直接轉換零中頻架構，低噪聲高線性的射頻前端，可重構低通濾波器，以及小數分頻的鎖相環電路等等。我們計劃了多次流片來開發矽驗證的IP。作為這個項目的成果，我們會交付參考設計和TD-LTE/TD-SCDMA終端射頻收發器的IP。這個項目將有助於香港建立技術領先的作用並幫助本地的設計公司，OEM和ODM的製造商創造競爭優勢。