BLE is one of the key enabling technologies for short range wireless IoT applications and wearable electronics. BLE 4.2 release is a significant upgrade incorporating connectivity, security, speed and reliability. BLE 5 is the latest version of the core specification. The new specification will quadruple the range, double the speed and increase data broadcasting capacity by 800%.
ASTRI provides highly integrated NB-IoT solution including RF transceiver, baseband and System-on-Chip for terminals and sensor nodes.
NB-IoT is a new global standard based on public and spectrum-licensed mobile operators’ networks. It is a wide area wireless technology which enables ubiquitous connections. Anything can be connected to the network from anywhere, regardless of its distance.
NB-IoT is a part of the global 3GPP Release 13 standard published in June 2016 optimized for Low Power Wide Area (LPWA) applications with the following advantages:
Low Power → Battery life up to 10 years
Low Cost → Cheap enough to be deployed in mass-scale
Hall sensors have been simulated in virtual fab platform. Several design parameters such as dimension, doping concentration, contact size have been simulated and optimised using TCAD. Hall voltage and sensitivity curve have been obtained to predict the performance of the sensor. Other process options such as p+ implant on top, replacing n-well with p-sub have also been simulated to compare the performance.
In this project, ICCAP of Agilent is used to extract DC and RF model for the devices fabricated in 0.13um SOI process. Both active devices including MOSFET, diode and bipolar, and passive devices such as resistor, capacitor and inductor models are extracted. As for MOSFET, floating body (FB) device, single body contact (T Type) and double body contact (H Type) device are covered in model extraction. Model lib includes temperature, noise and RF. Corner model is also included to include process variations. Automatic layout tools developed in this team is applied to generate nearly thousand device patterns. The models are qualified by commercially available QA tools (MQA).
On-chip ESD protection design for advanced silicon process
Whole chip ESD protection scheme is designed to provide effective ESD protection for integrated circuits fabricated in several technology nodes. Protection devices are designed and verified using TCAD based process and device simulation, which are utilized in I/O ESD protection circuit and power clamps. Developed ESD protection schemes can provide effective ESD protection up to 8000V in Human Body Model (HBM) test without latch-up problem. Compact model for ESD protection devices is also provided to enable fast and efficient ESD simulation with core circuit.
Total ESD solutions for 0.5 um 200V SOI BCD process (HBM 2000V)
Total ESD solutions for 0.35um CMOS process (HBM 4000V)
Total ESD solutions for 0.13um CMOS process (HBM 2000V)
Total ESD solutions for 65nm CMOS process (HBM 2000V)
Total ESD solutions for 55nm CMOS process (HBM 8000V)
Total ESD solutions for 40nm CMOS process (HBM 2000V)
Total ESD solutions for 16nm CMOS process (HBM 2000V)
ASTRI has established a family of low power ADC IPs.
12/14 bit low power Successive Approximation Register (SAR) ADC delivers low power and low cost analog to digital conversion of reasonable performance for portable medical and sensor devices. ASTRI’s IP is already in mass production for various applications.
24-bit sigma delta ADC is based on sigma delta technology intended primarily for instrumentation applications. It consists of a second-order three-bit quantizer noise shaping modulator and digital decimation filter.
Low input-referred noise: 1.5uVrms
Multi-bit feedback DAC with Data-Weighted Averaging to achieve low power consumption
Unity feedforward architecture for low distortion
2nd order modulator loop, stable for full scale input
The three-channel analog front-end is a highly integrated solution for G-sensor application. The IP has been licensed to a leading SoC design and service provider and its products are already in mass production.
ASTRI’s uncooled infrared micro-bolometer readout IC is a high resolution, low power consumption and low noise signal sensing IC for deployment in thermograph applications, such as night vision, surveillance and medical imaging, which require high resolution imaging capability.
640 x 480 pixel focal plan array
Pixel pitch = 20um x 20um
Uncooled operation (with or without thermo-electric cooler)
Adjustable integration time
Adjustable integration capacitors
2 analog outputs available
Digital selection mode via SPI
Power consumption < 360mW (without thermo-electric cooler)