應用於三維互連製造的機理性軟件

應用於三維互連製造的機理性軟件

  • 應用於三維互連製造的機理性軟件
    ART/144CP
    20130102 - 20140331
    9850

    史訓清博士
    1. The characterization methodology and database of basic electrochemical behavior of the 3 additives used in the Cu chemical solution, those would be delivered by one report. [Completion Date: 6 months after the project start] 2. The validated numerical models for modeling & simulating the electrochemical deposition (ECD) of the via filling process using the new additive interaction mechanism, those would be delivered by document and demonstration. [Completion Date: 6 months after the project start] 3. The numerical models for goodness quantification of 3D-interconnect in the ECD fabrication process using the boundary element technique, those would be delivered by document and demonstration. [Completion Date: 12 months after the project start] 4. The computational engine & recipe window optimization module for seamless via to wafer-level modeling and simulation of the via filling process, those would be delivered by document and demonstration. [Completion Date: 12 months after the project start] 5. The full version of the MS-3D software, including 4 key functional modules, i.e., the user interface, the ECD process modeling & simulation computational engine, the recipe window optimization and the result visualization with the recipe window tolerance less than 15%, which would be delivered by documentation and demonstration. [Completion Date: 15 months after the project start]
    Dr Enboa Wu Ms YH KWAN Dr Ziyang GAO Dr Bin XIE Dr Yaofeng SUN Mr Yat Kit, Kolo TSUI Mr Andy LEE Mr Jackie CHAU Mr Carlos CHOW Mr WK LUK Mr Shu Kin YAU Dr Kwong Wa, Ken YEUNG Dr Yueping, Pearl YE Dr Peter WAN Dr Minghui GAO Mr Man Kai, Paul CHEUNG Dr Yan LIU Ms Karina KO Mr Jiye LUO Mr Hai XIA Mr Chen CHEN Mr Lourdito OLLERES Mr Jun CHEN Mr Xiangfeng SHAO Mr Delfin LAM Ms Juanna YAO Ms Fiona WANG Mr Ryan CHUNG Mr Jian, Rockey ZHU Mr Chee Kiong, Mike LOH Ms Zhen SU Mr Shaoqin XIE Mr Man Lung, Ivan SHAM Dr Song, Steve HE Dr Yuxing, Michael REN Dr Mingxiang XIAO Ms Wai Kee, Vicky LAI Ms Ya LV
    China Wafer Level CSP Ltd. 香港科技大學 Huitai Digital Technology Holdings Limited [贊助機構] Huitai Digital Technology Holdings Limited (Technology Licensing) [贊助機構] Info Bright Technologies (H.K.) Co., Ltd. Shanghai Institute of Microsystem & Information Technology, China Shanghai Jiao Tong University, China Shanghai Sinyang Semiconductor Materials Co., Ltd

    三維集成電路能夠廣泛地應用到眾多的電子產品中﹐如存儲器、圖像傳感器、射頻和微機電系統等。三維微互連技術是現今唯一的方法來進行三維堆疊和集成。三維微互連主要通過四個工藝來製造﹐即微孔成型、微孔填充、晶圓減薄和晶圓堆疊。因為微孔填充工藝會受到諸多參數(如微孔尺寸、電化學和物理傳輸)的影響﹐工業界只能通過反複實驗的方法來確定最優工藝配比窗口﹐此方法不僅耗時,而且成本高昂。這一現狀極大的阻礙了三維集成電路封裝技術在眾多電子產品中的應用。此項目旨在開發一個基於電化學機理的軟件﹐模擬微孔填充工藝的電化學沉積過程﹐低成本地確定三維微互連製造的精確優化配比窗口﹐進而縮短基於三維集成電路電子產品的進入市場週期。 首先,基於對三種添加劑(即加速劑、抑製劑和整平劑)的電化學性態(如分子尺寸、傳輸速率和吸附速率等)的根本性理解﹐我們將開發一個全新的添加劑作用機理﹐即所謂的“競爭与聚集機理”﹐其能夠精确地描述三種添加劑在微孔填充工藝中的吸附与脫附性態。然後﹐我們將會開展眾多的實驗來驗證這一機理的數值模型。基於已經驗證過的數值模型﹐我們將會進一步開發一個完整的軟件﹐包括四個主要的組件: 即用戶界面、計算引擎、優化配比窗口和結果顯示。作為離線或者在線的工具﹐此軟件能夠幫助用戶以快速和低成本的方式來確定三維微互連製造的優化工藝配比窗口。 根據TechSearch、Prismark和Yole Development的市場調研報告顯示﹐即使僅考慮銅柱凸點、硅通孔和硅基板的應用﹐三維微互連的市場在2015年也將會達到53億美元的規模。此項目開發的軟件不僅能夠幫助用戶快速和低成本的方式確定三維微互連製造的優化工藝配比窗口﹐縮短基於三維集成電路的電子產品的開發週期。最重要的是﹐它能夠成為一個關鍵的工具幫助業界加快并真正實現三維集成電路封裝技術在眾多電子產品中的廣泛應用。因此﹐此軟件的成功開發將毫無疑問地使應科院成為三維集成電路封裝領域的世界級研發機構﹐同時可以提升本地企業的競爭力﹐及其市場份額。