Home > Radio Frequency Power Amplifiers using Gallium Arsenide (GaAs) Hetero-junction Bipolar Transistors (HBT) Radio Frequency Power Amplifiers using Gallium Arsenide (GaAs) Hetero-junction Bipolar Transistors (HBT) Project Title:Radio Frequency Power Amplifiers using Gallium Arsenide (GaAs) Hetero-junction Bipolar Transistors (HBT) Project Reference:ART/090CI Project Type: Project Period:20100517 - 20121116 Funds Approved (HK$’000):7422 Project Coordinator:Mr David Kwong Deputy Project Coordinator: Deliverable: Research Group: Sponsor:Sana Semiconductors Limited [Sponsor] Description: Co-Applicant: Keywords: