LTE-Advanced RF Transceiver Chip

LTE-Advanced RF Transceiver Chip

LTE-Advanced RF Transceiver Chip
ART/183CP
20140922 - 20160321
18117

Mr Bill Weimin Zhang
LTE-Advanced RF Transceiver Architecture and System Design • Carrier aggregation with bandwidth up to 40 MHz • Envelope tracking for power saving • Advanced MIMO (downlink 4Rx, uplink 2Tx) • Worldwide frequency bands from 450 MHz to 3.8 GHz • System and modules specifications definition LTE-Advanced RF Transceiver Modules IP • 1st version modules IP design in terms of circuit schematic, netlist and simulation • 1st version modules including RF front-end modules, frequency synthesizers, ADC, DAC, control, interface and etc • Refined modules IP design in terms of circuit schematic, netlist and simulation • Refined modules including RF front-end modules, frequency synthesizers, ADC, DAC, control, interface and etc LTE-Advanced RF Transceiver Chips • 1st version LTE-Advanced RF transceiver chips for 3GPP Release 10 and 11 • Final LTE-Advanced RF transceiver chips for 3GPP Release 10 and 11 Reference Design Boards • Reference design boards for the RF transceiver chips to function and test in a platform
Dr Che-I, Justin CHUANG Mr Jui Kuang, Ray HO Mr Wai Po WONG Dr Gang, Dennis QIAN Mr Huimin, Henry GUO Mr Kai-cheung, Tim CHUNG Dr Wang Chi, Charles CHENG Dr Shuzuo LOU Mr Lefeng, Victor SHEN Mr Xiaoming, Michael CHEN Dr Dan, Rachel WANG Mr To Shing WONG Mr Jinghong, Perry ZHU Dr Shiyuan ZHENG Dr Shaohua ZHAO Mr Wuxue, Rewkie NI Mr Xiaodong YU Mr Biqiang, Tyler LUO Dr Li, Ann LI Dr Yu, Lori LIU Mr Zhiwei WU Mr Sheng CHEN Ms Yan WAN Ms Mei Fan, Rebecca CHOI Ms On Kei, Angel CHEUNG Dr Xinyi LIU Mr Koon Man, Angus SAM Mr Chiing Chyuan, Calvin LEE
Gesar Electronics International Co., Limited 1 [Sponsor] Gesar Electronics International Co., Limited 2 [Sponsor] Prime Sky International Holdings Limited 1 [Sponsor] Prime Sky International Holdings Limited 2 [Sponsor] Southeast University The Hong Kong University of Science and Technology

International Telecommunications Union-Radio communications sector (ITU-R) has specified a set of requirements for 4G standards, named the International Mobile Telecommunications Advanced (IMT-Advanced) specification and LTE-Advanced is officially IMT-Advanced compliant and backward compatible with LTE. LTE (Long Term Evolution) and LTE-Advanced have been selected by most of mobile operators in the world as the evolution of their cellular networks and LTE-Advanced 3GPP Release 11 specification version V11.8.0 was recently released in March 2014. In this full project, an LTE-Advanced RF transceiver will be developed for 3GPP Releases 10 and 11 with data rates up to 300/100 Mbps (downlink/uplink). The transceiver will support worldwide frequency bands from 450 MHz to 3.8 GHz covering major countries/regions such as Mainland China/Hong Kong, US, Europe, Japan, Australia and UK. Key areas in LTE-Advanced RF transceiver design and implementation, such as carrier aggregation, advanced Multiple Input Multiple Output (MIMO), envelope tracking (ET), and wideband reconfigurable RF front-end design will be developed. Two tapeouts have been planned to produce silicon proven IPs. LTE-Advanced RF transceiver chip, reference design, patent and IPs will be delivered as the achievements of this project and this project will greatly help Hong Kong to set up a technology leading role in the region, and create a competitive edge for local IC design houses, wireless broadband solution vendors, OEM and ODM manufacturers.