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LED Chip & Packaging

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Vertical LED Chip

This project focuses on the research and development of GaN-based vertical LED chips, including epitaxial layer structure design, LED chip design, fabrication and characterization. The removal of the sapphire substrate is a necessary process for fabricating the vertical LED device. We have developed a novel chemical mechanical polishing (CMP) approach, replacing the typical laser lift-off process for sapphire removal thus enhancing the process yield in terms of reverse current specifi cation. As at 2010, eight US patents were fi led for this unique method. The project team also received the Product Innovation Award in the 2010 Nanhai Cup National SSL Innovation Contest on the Mainland.
 


Technologies for Transfer
  • CMP-based process recipes for removing sapphire substrate
  • Design and characterization of GaN vertical LED chip


High-Power Chip-on-Board (CoB) Package (>1 W)

This project focuses on developing highly efficient CoB technology for LED lighting applications. By 2010, the following specifi cations have been achieved:
  • Street lamp application: 110 lm/W @ 3,000K
  • General lighting application
    • 126 lm/W @ 5,500K & Colour Rendering Index (CRI) 75
    • 84 lm/W @ 4,500K & CRI 80
  • Narrow band Correlated Colour Temperature (CCT) tunable: ±500K
    • 3,000K: 96 lm/W; CRI 92
    • 4,000K: 92 lm/W; CRI 91
    • 4,500K: 102 lm/W; CRI 90
    • 5,000K: 105 lm/W; CRI 87
  • Wide band CCT tunable: 2,300K - 5,000K @ 82 lm/W - 88 lm/W, CRI 88-92

Technologies for Transfer
  • Tailor-made substrate design and prototypes for requested lighting fi xtures
  • CCT tunable package design and prototypes

Wafer Level (WL) LED System-in-Package (SiP)

This project focuses on developing LED SiP-related design and packaging platform technologies for compact LED fl ash module. It includes the development of a compact LED SiP solution via bulk Micro-Electro-Mechanical System (MEMS) and wafer level (WL) process which eases the integration of module in hand-held devices such as cellphones. Moreover, the module overcomes the thermal and thermo-mechanical issues in LED package, thereby further reducing production cost.

Technologies for Transfer
  • Prototypes of functional silicon substrate, LED fl ash component and LED fl ash module
  • WL LED substrate fabrication design rule and guideline
  • LED flash module optics/thermal/electrical design and characterization including modelling and analysis related design library

Panel Level (PL) LED Platform Development

This project focuses on developing PL LED packaging platform technologies for designing ultra highpower and high-power density LED for general LED lighting and LED projector applications. The design is a tailor-made high-power dissipation package reinforcing the interconnection for withstanding high current loading. The results will enhance the manufacturing yield rate and product reliability, as well as reduce manufacturing cost.

Technologies for Transfer
  • Embedded thermal spreader design with thermal resistance reduction of more than 25%
  • Through Glass Via (TGV) interconnection design to withstand high current loading
  • Multiple LED Array (MLA) design with 50% reduction of on-device current loading and enhancement in optical performance
  • PL LED substrate manufacturing process design rule and guideline